Porous silicon layers 7 µm thick with a porosity of 80% have been prepared for 1 O cm, 100 oriented, polished silicon wafers. As the measurement temperature decreases from 300 to 10 K the width of the PL spectra remains almost constant, while the lifetime of the 2 eV PL band increases from 25 to 3000 µs and the lifetime of the 1.5 eV emission changes from 100 to 200 µs. At all the temperatures, the broad PL bands show distinct peaks. We have interpreted these results in terms of the confined quantum wire model recalling for the first time the presence of classes of wires of different size, multiple of the minimum etchable dimension a/4, being a the silicon lattice parameter. © 1994 IOP Publishing Ltd.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Amato, G., di Francia, G., Menna, P., & Ninno, D. (1994). Evidence of nanostructures of different size in porous silicon. Europhysics Letters, 25(6), 471 - 476. https://doi.org/10.1209/0295-5075/25/6/013