Experimental results on silicon annealing by a long-pulse, high-power XeCl laser system

D. Murra, S. Bollanti, F. Bonfigli, D. Della Sala, P. Di Lazzaro, T. Letardi

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

The XeCl laser facility Hercules, delivering a maximum energy of 8 J in 160 ns FWHM, has been used to irradiate amorphous silicon (a-Si) films on glass substrate. We designed an optical homogeneizer to reshape the large cross-section of the laser beam (10×5) cm2, in order to reach a fluence up to 0.5 J/cm2 over a (13×1) cm2 area. The beam resulted spatially homogenous within 10% (referred to peak-to-peak fluctuations). We obtained poly-silicon films with grain size ranging from 0.1 to 2 μm, depending on the laser energy density. These preliminary results show that the grain size is critically fluence-dependent when the so-called super-lateral-growth regime is approached (approximately at 0.42 J/cm2 for a 50 nm-thick a-Si film), with a maximum slope of the grain size vs. energy density greater than 0.5 μm/(mJ/cm2).
Original languageEnglish
Publication statusPublished - 2000
Externally publishedYes
EventALT '99 International Conference on 'Advanced Laser Technologies - , Unknown
Duration: 1 Jan 2000 → …

Conference

ConferenceALT '99 International Conference on 'Advanced Laser Technologies
CountryUnknown
Period1/1/00 → …

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Murra, D., Bollanti, S., Bonfigli, F., Della Sala, D., Di Lazzaro, P., & Letardi, T. (2000). Experimental results on silicon annealing by a long-pulse, high-power XeCl laser system. Paper presented at ALT '99 International Conference on 'Advanced Laser Technologies, Unknown.