Field emission from silicon nanowires: Conditioning and stability

Riccardo Riccitelli, Aldo Di Carlo, Angelamaria Fiori, Silvia Orlanducci, Maria Letizia Terranova, Antonino Santoni, Roberta Fantoni, Alessandro Rufoloni, Felix Jimenex Villacorta

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Abstract

We report the low-pressure chemical vapor deposition growth and field emission characterization of silicon nanowires (SiNWs). Our field emission results show the importance of the so called conditioning process on the reproducibility of the emission performance itself; this effect has proven to be reversible for the investigated current regime. We explained this behavior by invoking a current-driven desorption of residual adsorbed gases. A highly reproducible turn-on electric field of 27 Vμm is found for a diode-connected SiNW planar sample. Furthermore, stability analysis is performed showing the technologically promising field emission behavior of the samples. © 2007 American Institute of Physics.
Original languageEnglish
Article number054906
Pages (from-to)-
JournalJournal of Applied Physics
Volume102
Issue number5
DOIs
Publication statusPublished - 2007
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Riccitelli, R., Di Carlo, A., Fiori, A., Orlanducci, S., Terranova, M. L., Santoni, A., ... Villacorta, F. J. (2007). Field emission from silicon nanowires: Conditioning and stability. Journal of Applied Physics, 102(5), -. [054906]. https://doi.org/10.1063/1.2776225