First and second-order Raman scattering in Si nanostructures within silicon nitride

Lucia V. Mercaldo, Emilia M. Esposito, Paola Delli Veneri, Giuseppe Fameli, Salvo Mirabella, Giuseppe Nicotra

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Abstract

First and second-order Raman analysis on annealed silicon nitride films is reported. Possible formation of amorphous Si nanoparticles after an intermediate treatment is deduced from the occurrence of a resonant spectrum. After nucleation of Si nanocrystals, with a model description of the first-order spectra it is possible to access information regarding mean radius, size dispersion, and crystalline phase fraction consistent with the fundamental data derived from microscopy. Substantial increase in second to first order intensity ratio is also observed: Enhanced electron-phonon coupling in both amorphous and crystalline Si nanoparticles is suggested. © 2010 American Institute of Physics.
Original languageEnglish
Article number153112
Pages (from-to)-
JournalApplied Physics Letters
Volume97
Issue number15
DOIs
Publication statusPublished - 11 Oct 2010

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Mercaldo, L. V., Esposito, E. M., Veneri, P. D., Fameli, G., Mirabella, S., & Nicotra, G. (2010). First and second-order Raman scattering in Si nanostructures within silicon nitride. Applied Physics Letters, 97(15), -. [153112]. https://doi.org/10.1063/1.3501133