We report a systematic study on the formation of photoluminescent chemically etched porous silicon. Samples have been fabricated in HF HNO3based solutions for various etching times. The growth of the luminescent layer has been studied by correlating film porosity, thickness and integrated photoluminescence intensity to the etching time. For long etching duration porosity attains an almost constant value while the rate of film formation strongly decreases. On the other hand Photoluminescence spectra, recorded in the visible range, are similar in shape for the various samples. Our data are explained assuming the existence of a critical pore width, Wc, such that, once initiated, the preferential etching at some anodic site on the silicon surface stops only when Wcis reached. © 1995.
All Science Journal Classification (ASJC) codes
- Materials Chemistry
- Condensed Matter Physics
- Materials Science(all)
Di Francia, G., Maddalena, P., & Ninno, D. (1995). Formation of luminescent chemically etched porous silicon. Solid State Communications, 96(8), 579 - 581. https://doi.org/10.1016/0038-1098(95)00450-5