Ge/Bi/Si(001)-c(4 × 2) interface studied by high-resolution core-level spectroscopy

P. De Padova, R. Larciprete, C. Ottaviani, S. Priori, C. Quaresima, A. Reginelli, B. Ressel, P. Perfetti

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Abstract

The adsorption of germanium on the Bi/Si(001)-(2 × 5) surface [bismuth saturation coverage of 0.7 ML (monolayers)] was investigated by core-level photoemission spectroscopy. At submonolayer germanium coverage, the presence of a bulk component largely dominating the Ge 3d core level demonstrates that the favourite adsorption sites are the bismuth-terminated terraces, where Ge-Bi site exchange takes place. At larger germanium coverage, in addition to the previous process, the occurrence of a pure germanium epitaxy is indicated by the presence of the (2 × 1) surface components in the Ge 3d core level.
Original languageEnglish
Pages (from-to)362 - 366
Number of pages5
JournalSurface Science
Volume433
DOIs
Publication statusPublished - 2 Aug 1999
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

De Padova, P., Larciprete, R., Ottaviani, C., Priori, S., Quaresima, C., Reginelli, A., ... Perfetti, P. (1999). Ge/Bi/Si(001)-c(4 × 2) interface studied by high-resolution core-level spectroscopy. Surface Science, 433, 362 - 366. https://doi.org/10.1016/S0039-6028(99)00505-1