Nanostructured silicon carbon films, composed of silicon nanocrystals embedded in hydrogenated amorphous silicon carbon matrix, have been prepared by plasma enhanced chemical vapor deposition technique using silane and methane gas mixture diluted in hydrogen. The composition, structure and surface morphology of the films have been investigated by nuclear techniques, Raman, Fourier transform infrared spectroscopy and atomic force microscopy. The study has demonstrated that the nanostructured silicon carbon films can be deposited at low temperature (250 °C) by varying rf power and the crystallinity degree of silicon is quite uniform along the growth direction. Further, it has established that with increase in rf power crystalline volume fraction decreases while carbon content increases in the films. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
|Pages (from-to)||1869 - 1872|
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - Oct 2012|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
Coscia, U., Ambrosone, G., Basa, D. K., Rigato, V., Ballarini, M., Virga, A., ... Mercaldo, L. V. (2012). Growth and characterization of silicon nanocrystallites embedded in amorphous silicon carbon matrix by PECVD. Physica Status Solidi (C) Current Topics in Solid State Physics, 9(10-11), 1869 - 1872. https://doi.org/10.1002/pssc.201200190