Growth of Au-catalysed Si nanowires by low pressure chemical vapour deposition on Si(100) and amorphous Si surfaces

A. Santoni, F. Jimenez Villacorta, A. Rufoloni, A. Mancini

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Abstract

Au-mediated Si nanowires (SiNW) have been grown at low temperatures (500-560 °C) on crystalline Si(100) and amorphous Si surfaces by means of low pressure chemical vapour deposition from Si2H6 in the 0.05-1.2mbar range. The influence of the substrates on the nanowire (NW) growth and morphology has been investigated by means of x-ray photoelectron spectroscopy and scanning electron microscopy. No NW growth has been observed on the Au covered amorphous Si surfaces. On both substrates, the NW exhibit inhomogeneous sidewalls and a new morphology showing NW entrenchment which has been explained as a consequence of vapour-liquid-solid growth termination due to Au diffusion on the SiNW sidewalls. © IOP Publishing Ltd.
Original languageEnglish
Article number012
Pages (from-to)10853 - 10859
Number of pages7
JournalJournal of Physics Condensed Matter
Volume18
Issue number48
DOIs
Publication statusPublished - 6 Dec 2006
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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