Au-mediated Si nanowires (SiNW) have been grown at low temperatures (500-560 °C) on crystalline Si(100) and amorphous Si surfaces by means of low pressure chemical vapour deposition from Si2H6 in the 0.05-1.2mbar range. The influence of the substrates on the nanowire (NW) growth and morphology has been investigated by means of x-ray photoelectron spectroscopy and scanning electron microscopy. No NW growth has been observed on the Au covered amorphous Si surfaces. On both substrates, the NW exhibit inhomogeneous sidewalls and a new morphology showing NW entrenchment which has been explained as a consequence of vapour-liquid-solid growth termination due to Au diffusion on the SiNW sidewalls. © IOP Publishing Ltd.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Santoni, A., Villacorta, F. J., Rufoloni, A., & Mancini, A. (2006). Growth of Au-catalysed Si nanowires by low pressure chemical vapour deposition on Si(100) and amorphous Si surfaces. Journal of Physics Condensed Matter, 18(48), 10853 - 10859. . https://doi.org/10.1088/0953-8984/18/48/012