Growth of Ge layers on Si(100) monitored by in situ ellipsometry

R. Larciprete, S. Cozzi, E. Masetti, M. Montecchi, G. Padeletti

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Ellipsometric monitoring of the growth of Ge layers on Si(100) by pyrolysis of GeH4at substrate temperatures of 400, 450 and 500°C was performed by using a single wavelength ellipsometer based on the four detector photopolarimeter. By coupling ellipsometric monitoring with X-ray photoelectron spectroscopy surface analysis, the changeover between bi-dimensional and tri-dimensional growth modality at 450°C was found at Ge coverage of about 1 ML. The recorded Ψ-Δ data were analysed by using a growth model based on the Effective Medium Approximation (EMA) in order to derive the fraction of voids v and the thickness of the EMA layer hEMA. The values found for v were consistent with the clustered morphology observed by Atomic Force Microscopy (AFM) analysis of the samples. A qualitative model for the island evolution and for the growth rate of the equivalent Ge layer as a function of the substrate temperature was derived from the calculated v and hEMA, in agreement with the indications given by AFM and Rutherford backscattering spectroscopy film characterisation. © 1998 Elsevier Science S.A.
Original languageEnglish
Pages (from-to)49 - 56
Number of pages8
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 2 Mar 1998


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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