Ellipsometric monitoring of the growth of Ge layers on Si(100) by pyrolysis of GeH4at substrate temperatures of 400, 450 and 500°C was performed by using a single wavelength ellipsometer based on the four detector photopolarimeter. By coupling ellipsometric monitoring with X-ray photoelectron spectroscopy surface analysis, the changeover between bi-dimensional and tri-dimensional growth modality at 450°C was found at Ge coverage of about 1 ML. The recorded Ψ-Δ data were analysed by using a growth model based on the Effective Medium Approximation (EMA) in order to derive the fraction of voids v and the thickness of the EMA layer hEMA. The values found for v were consistent with the clustered morphology observed by Atomic Force Microscopy (AFM) analysis of the samples. A qualitative model for the island evolution and for the growth rate of the equivalent Ge layer as a function of the substrate temperature was derived from the calculated v and hEMA, in agreement with the indications given by AFM and Rutherford backscattering spectroscopy film characterisation. © 1998 Elsevier Science S.A.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Larciprete, R., Cozzi, S., Masetti, E., Montecchi, M., & Padeletti, G. (1998). Growth of Ge layers on Si(100) monitored by in situ ellipsometry. Thin Solid Films, 315(1-2), 49 - 56. https://doi.org/10.1016/S0040-6090(97)00585-3