High quality MOCVD GaN film grown on sapphire substrates using HT-AlN buffer layer

B. Potì, M.A. Tagliente, A. Passaseo

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Abstract

In this work we report on the growth and characterization of high quality MOCVD GaN film grown on Al2O3substrates by using a HT (>1150 °C)-AlN buffer layer. We have investigated the most favorable growth conditions in terms of temperature, thickness and growth rate of AlN buffer layer in order to optimize the high temperature GaN layer. The improved morphological and structural properties of GaN layer were verified by AFM and XRD measurements. The optimized GaN layer presents a smooth surface with a rms value of 1.4 Å. The full width at half maximum (FWHM) for 800 nm thick GaN films is 144″. Furthermore PL measurements and C-V analysis confirm that in GaN layer grown on HT-AlN buffer layer defect density is drastically reduced. © 2006 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)2332 - 2334
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume352
Issue number23-25
DOIs
Publication statusPublished - 15 Jul 2006
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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