High resolution electron microscopy and x-ray photoelectron spectroscopy studies of heteroepitaxial Si

N. Frangis, J. Van Landuyt, R. Larciprete, S. Martelli, E. Borsella, S. Chiussi, J. Castro, B. León

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Abstract

Pulsed laser induced epitaxy has been used to produce graded heteroepitaxial SixGe(1-x)alloy layers on Si(100) wafers by melting an a-Ge film, previously grown by laser induced chemical vapor deposition, together with part of the wafer itself. High resolution electron microscopy and x-ray photoelectron spectroscopy analyses of SixGe(1-x)alloys suggest the formation of two sublayers; a strained one starting from the substrate up to Ge concentration of about 10-15 at.% and a partially relaxed one on top. The complete crystallization of the alloy without the formation of precipitates and with low threading dislocation density, proves that the combination of these laser-induced techniques represents a new and alternative process for the attainment of high quality SixGe(1-x)heterostructures. © 1998 American Institute of Physics.
Original languageEnglish
Pages (from-to)2877 - 2879
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number22
DOIs
Publication statusPublished - 1998
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Frangis, N., Van Landuyt, J., Larciprete, R., Martelli, S., Borsella, E., Chiussi, S., ... León, B. (1998). High resolution electron microscopy and x-ray photoelectron spectroscopy studies of heteroepitaxial Si. Applied Physics Letters, 72(22), 2877 - 2879. https://doi.org/10.1063/1.121487