Pulsed laser induced epitaxy has been used to produce graded heteroepitaxial SixGe(1-x)alloy layers on Si(100) wafers by melting an a-Ge film, previously grown by laser induced chemical vapor deposition, together with part of the wafer itself. High resolution electron microscopy and x-ray photoelectron spectroscopy analyses of SixGe(1-x)alloys suggest the formation of two sublayers; a strained one starting from the substrate up to Ge concentration of about 10-15 at.% and a partially relaxed one on top. The complete crystallization of the alloy without the formation of precipitates and with low threading dislocation density, proves that the combination of these laser-induced techniques represents a new and alternative process for the attainment of high quality SixGe(1-x)heterostructures. © 1998 American Institute of Physics.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Frangis, N., Van Landuyt, J., Larciprete, R., Martelli, S., Borsella, E., Chiussi, S., ... León, B. (1998). High resolution electron microscopy and x-ray photoelectron spectroscopy studies of heteroepitaxial Si. Applied Physics Letters, 72(22), 2877 - 2879. https://doi.org/10.1063/1.121487