High resolution photoemission core level spectroscopy study and TEM analysis of the Ge/As/Si(0 0 1) growth

P. De Padova, R. Larciprete, C. Quaresima, R. Gunnella, A. Reginelli, L. Ferrari, P. Perfetti, K. Yu-Zhang, Y. Leprince-Wang

Research output: Contribution to journalArticle

Abstract

The deposition of 1 ML of As on Si(0 0 1)-(2 × 1) surface and the heteroepitaxial Ge/As/Si(0 0 1)-(2 × 1) growth were studied by using high resolution core-level spectroscopy and transmission electron microscopy (TEM). From the spectral decomposition of the Si2p core levels, collected on the Ge/Si interfaces obtained by codepositing As and Ge atoms at different Ge thickness, we identify the contribution of different Si layers to the Si2p lineshape, in agreement with recent theoretical final-state pseudopotential calculations. The bulk-like Ge3d core levels reflected the occurrence of a complete Ge-As site-exchange process, while the pseudomorphic layer-by-layer Ge/Si growth was confirmed by TEM investigation. © 2001 Elsevier Science B.V.
Original languageEnglish
Pages (from-to)574 - 579
Number of pages6
JournalSurface Science
Volume482-485
Issue numberPART 1
DOIs
Publication statusPublished - 20 Jun 2001
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

De Padova, P., Larciprete, R., Quaresima, C., Gunnella, R., Reginelli, A., Ferrari, L., ... Leprince-Wang, Y. (2001). High resolution photoemission core level spectroscopy study and TEM analysis of the Ge/As/Si(0 0 1) growth. Surface Science, 482-485(PART 1), 574 - 579. https://doi.org/10.1016/S0039-6028(00)01026-8