The deposition of 1 ML of As on Si(0 0 1)-(2 × 1) surface and the heteroepitaxial Ge/As/Si(0 0 1)-(2 × 1) growth were studied by using high resolution core-level spectroscopy and transmission electron microscopy (TEM). From the spectral decomposition of the Si2p core levels, collected on the Ge/Si interfaces obtained by codepositing As and Ge atoms at different Ge thickness, we identify the contribution of different Si layers to the Si2p lineshape, in agreement with recent theoretical final-state pseudopotential calculations. The bulk-like Ge3d core levels reflected the occurrence of a complete Ge-As site-exchange process, while the pseudomorphic layer-by-layer Ge/Si growth was confirmed by TEM investigation. © 2001 Elsevier Science B.V.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
De Padova, P., Larciprete, R., Quaresima, C., Gunnella, R., Reginelli, A., Ferrari, L., ... Leprince-Wang, Y. (2001). High resolution photoemission core level spectroscopy study and TEM analysis of the Ge/As/Si(0 0 1) growth. Surface Science, 482-485(PART 1), 574 - 579. https://doi.org/10.1016/S0039-6028(00)01026-8