The deposition of 3 ML of Ge on Si(001) in the presence of 1 ML of Sb was investigated by core level photoemission spectroscopy. In addition to the predominant localisation of Ge below Sb, revealed by the comparison between a surface-sensitive and a bulk-sensitive detection configuration, the complete lack of surface components in the Ge 3d spectrum indicates the absence of dimerized Ge atoms at the top layer. Ge(2 × 1) surface reconstruction was recovered when desorbing Sb by annealing cycles to 750°C. The possibility to reversibly recover the surface reconstruction when adding and removing an Sb capping layer on Ge/Si(001) indicates that Sb can be successfully used to preserve perfectly terminated SiGe heterostructures against contamination. © 1998 Elsevier Science B.V.
All Science Journal Classification (ASJC) codes
- Surfaces, Coatings and Films
De Padova, P., Larciprete, R., Quaresima, C., Ottaviani, C., Comicioli, C., Crotti, C., ... Perfetti, P. (1998). High resolution photoemission study of the surfactant desorption after Sb mediated Ge epitaxy on Si(001). Applied Surface Science, 123-124, 641 - 645. https://doi.org/10.1016/S0169-4332(97)00578-3