High resolution photoemission study of the surfactant desorption after Sb mediated Ge epitaxy on Si(001)

P. De Padova, R. Larciprete, C. Quaresima, C. Ottaviani, C. Comicioli, C. Crotti, M.C. Håkansson, M. Peloi, B. Ressel, P. Perfetti

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Abstract

The deposition of 3 ML of Ge on Si(001) in the presence of 1 ML of Sb was investigated by core level photoemission spectroscopy. In addition to the predominant localisation of Ge below Sb, revealed by the comparison between a surface-sensitive and a bulk-sensitive detection configuration, the complete lack of surface components in the Ge 3d spectrum indicates the absence of dimerized Ge atoms at the top layer. Ge(2 × 1) surface reconstruction was recovered when desorbing Sb by annealing cycles to 750°C. The possibility to reversibly recover the surface reconstruction when adding and removing an Sb capping layer on Ge/Si(001) indicates that Sb can be successfully used to preserve perfectly terminated SiGe heterostructures against contamination. © 1998 Elsevier Science B.V.
Original languageEnglish
Pages (from-to)641 - 645
Number of pages5
JournalApplied Surface Science
Volume123-124
DOIs
Publication statusPublished - 1998
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

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De Padova, P., Larciprete, R., Quaresima, C., Ottaviani, C., Comicioli, C., Crotti, C., ... Perfetti, P. (1998). High resolution photoemission study of the surfactant desorption after Sb mediated Ge epitaxy on Si(001). Applied Surface Science, 123-124, 641 - 645. https://doi.org/10.1016/S0169-4332(97)00578-3