High temperature core-level photoemission study of Si(111)

S. Vandré, A. Santoni, A. Goldoni, V.R. Dhanak, M. Sancrotti

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Abstract

Si 2p core-level photoemission spectra of Si(111) have been recorded as a function of temperature from 300 up to 1673 K. With increasing temperature a strong shift in binding energy and thermal broadening have been observed. Apart from the (7 × 7)-(1 × 1) phase transition at 1150 K the temperature evolution of the spectral centroid gives evidence for a high temperature phase transition at 1550 K.
Original languageEnglish
Pages (from-to)283 - 287
Number of pages5
JournalSurface Science
Volume377-379
DOIs
Publication statusPublished - 20 Apr 1997
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Vandré, S., Santoni, A., Goldoni, A., Dhanak, V. R., & Sancrotti, M. (1997). High temperature core-level photoemission study of Si(111). Surface Science, 377-379, 283 - 287. https://doi.org/10.1016/S0039-6028(96)01386-6