The 3d core levels and the valence band of Ge(111) have been studied by photoemission as a function of temperature up to 1200 K. Evidence of a phase transition is found between 1020 K and 1085 K from core level analysis. For 1020 K < T < 1200 K the data can be interpreted consistently with an incomplete surface melting scenario. A finite density of states at the Fermi level indicates a metallic surface layer above this phase transition. About 0.7-1 atomic bilayer is estimated to undergo the semiconductor-to-metal transition.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Santoni, A., Dhanak, V. R., Goldoni, A., Sancrotti, M., & Modesti, S. (1996). High-temperature metallization of the Ge(111) surface detected by photoemission spectroscopy. Europhysics Letters, 34(4), 275 - 280. https://doi.org/10.1209/epl/i1996-00450-8