High-temperature phase transitions on the Si(1 0 0) surface monitored by photoemission spectroscopy

A. Santoni, V.R. Dhanak, L. Grill, L. Petaccia

Research output: Contribution to journalArticle

10 Citations (Scopus)


The Si(1 0 0) surface has been studied by synchrotron radiation valence band photoemission as a function of temperature starting from the room temperature (2×1) reconstructed surface up to 1660 K. The analysis of the emission intensity at the Fermi level reveals that the surface acquires increasing metallic character as the temperature is raised. A sign of a possible break up of the dimer structure has been detected at 1485 K and associated, in accordance with Metois and Heyraud, with the disruption of the (2×1) reconstruction. A further transition has been observed at 1610 K, which could be indicative of surface melting.
Original languageEnglish
Pages (from-to)-
JournalSurface Science
Issue number1-3
Publication statusPublished - 1 Mar 2001
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this