High temperature X-ray absorption and valence band spectroscopy study of the Si(100) surface

V.R. Dhanak, A. Santoni, L. Grill, L. Petaccia

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Abstract

The Si(100) surface has been investigated in the temperature range 300-1660 K using valence band (VB) photoemission spectroscopy and X-ray absorption spectroscopy at the Si 2p edge. The VB photoemission results show that the high temperature surface has a metallic character and that above 1600 K, an appreciable increase in the metallicity indicates the presence of a phase transition. These results are supported by the X-ray absorption data.
Original languageEnglish
Pages (from-to)471 - 475
Number of pages5
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume114-116
DOIs
Publication statusPublished - 2001
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

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