In this work we propose the use of a plasma dry etching technique to condition the morphology of a silicon surface. The low environmental impacted NF3halogen compound is adopted together with Ar to perform a multi-step process which helps to enhance the silicon surface texturing, thus reducing the time needed for the whole dry etching procedure, which also include saw damage removal on silicon wafers. A detailed study of surface reflectance and etching rate as a function of the dry plasma process parameters is discussed to achieve suitable multi-crystalline silicon surfaces for photovoltaic applications. © 2013 Elsevier B.V.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
Cecchetto, L., Serenelli, L., Agarwal, G., Izzi, M., Salza, E., & Tucci, M. (2013). Highly textured multi-crystalline silicon surface obtained by dry etching multi-step process. Solar Energy Materials and Solar Cells, 116, 283 - 290. https://doi.org/10.1016/j.solmat.2013.04.015