Homodyne mixing at 150 GHz in a high electron mobility transistor

M. Ortolani, A. Di Gaspare, E. Giovine, F. Evangelisti, A. Doria, E. Giovenale, G.P. Gallerano, G. Messina, I. Spassovsky, A. Cetronio, C. Lanzieri, M. Peroni, V. Foglietti

Research output: Contribution to conferencePaper

Abstract

we explore the possibility of using an AlGaN/GaN high electron mobility transistor (HEMT) as a free-space coupled homodyne mixer. We used 150 GHz radiation from a Free Electron Laser, hence 5 times higher than the HEMT nominal band center at 30 GHz. The homodyne mixing provides a quasi-dc output signal, which makes the HEMT a detector of the radiation at 150 GHz. ©IEEE.
Original languageEnglish
DOIs
Publication statusPublished - 2008
Externally publishedYes
Event33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008 - , United States
Duration: 1 Jan 2008 → …

Conference

Conference33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008
CountryUnited States
Period1/1/08 → …

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Ortolani, M., Di Gaspare, A., Giovine, E., Evangelisti, F., Doria, A., Giovenale, E., ... Foglietti, V. (2008). Homodyne mixing at 150 GHz in a high electron mobility transistor. Paper presented at 33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008, United States. https://doi.org/10.1109/ICIMW.2008.4665651