Hot Carrier Effects in n-Channel Polycrystalline Silicon Thin-Film Transistors: A Correlation Between Off-Current and Transconductance Variations

Guglielmo Fortunato, Alessandro Pecora, G. Tallarida

Research output: Contribution to journalArticle

59 Citations (Scopus)


The application of bias-stresses with high source drain voltage and different gate voltages in polycrystalline thin-film transistors modifies the transconductance as well as the off current. These effects have been explained in terms of hot-holes injection into the gate insulator causing the formation of trap centers in the oxide and interface states near the drain. © 1994 IEEE.
Original languageEnglish
Pages (from-to)340 - 346
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number3
Publication statusPublished - 1 Mar 1994
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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