Identification of the Si 2p surface core level shifts on the Sb/Si(001)−(2 × 1) interface

P. De Padova, R. Larciprete, C. Quaresima, C. Ottaviani, B. Ressel, P. Perfetti

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Abstract

We investigated the effect of Sb-dimer-induced Si(001) relaxation on the Si 2p core level by high-resolution photoemission spectroscopy. Two surface components, S*and C*, were identified in the Si 2p core level measured on the Sb/Si(001)−(2×1) surface at 1 monolayer Sb coverage. By using the Sb-Ge site exchange process, a Ge layer was inserted between the Sb dimers and the Si substrate to separate the Si2p contribution arising from different atomic layers. We demonstrated that S*includes the contribution of the first, second, and third layers, whereas only the third layer contributes to C*. © 1998 The American Physical Society.
Original languageEnglish
Pages (from-to)2320 - 2323
Number of pages4
JournalPhysical Review Letters
Volume81
Issue number11
DOIs
Publication statusPublished - 14 Sep 1998
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

De Padova, P., Larciprete, R., Quaresima, C., Ottaviani, C., Ressel, B., & Perfetti, P. (1998). Identification of the Si 2p surface core level shifts on the Sb/Si(001)−(2 × 1) interface. Physical Review Letters, 81(11), 2320 - 2323. https://doi.org/10.1103/PhysRevLett.81.2320