We investigated the effect of Sb-dimer-induced Si(001) relaxation on the Si 2p core level by high-resolution photoemission spectroscopy. Two surface components, S*and C*, were identified in the Si 2p core level measured on the Sb/Si(001)−(2×1) surface at 1 monolayer Sb coverage. By using the Sb-Ge site exchange process, a Ge layer was inserted between the Sb dimers and the Si substrate to separate the Si2p contribution arising from different atomic layers. We demonstrated that S*includes the contribution of the first, second, and third layers, whereas only the third layer contributes to C*. © 1998 The American Physical Society.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
De Padova, P., Larciprete, R., Quaresima, C., Ottaviani, C., Ressel, B., & Perfetti, P. (1998). Identification of the Si 2p surface core level shifts on the Sb/Si(001)−(2 × 1) interface. Physical Review Letters, 81(11), 2320 - 2323. https://doi.org/10.1103/PhysRevLett.81.2320