Nitrogen dioxide gas sensor devices, fabricated using porous silicon membranes as active layer, have been investigated in the sub-ppm range at room temperature (RT). It has been found that hysteresis and a slow dynamics affect the sensor performances increasingly as long as the device operates. We show that, if a prolonged exposure to high concentrations of NO2is adopted as pre-treatment method, then the device is stable in the sub-ppm range and its electrical characteristics are greatly improved. © 2004 Elsevier B.V. All rights reserved.
All Science Journal Classification (ASJC) codes
- Analytical Chemistry
- Electrical and Electronic Engineering
Massera, E., Nasti, I., Quercia, L., Rea, I., & Di Francia, G. (2004). Improvement of stability and recovery time in porous-silicon-based NO 2 sensor. Sensors and Actuators, B: Chemical, 102(2), 195 - 197. https://doi.org/10.1016/j.snb.2004.04.018