Improvement of stability and recovery time in porous-silicon-based NO 2 sensor

E. Massera, I. Nasti, L. Quercia, I. Rea, G. Di Francia

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

Nitrogen dioxide gas sensor devices, fabricated using porous silicon membranes as active layer, have been investigated in the sub-ppm range at room temperature (RT). It has been found that hysteresis and a slow dynamics affect the sensor performances increasingly as long as the device operates. We show that, if a prolonged exposure to high concentrations of NO2is adopted as pre-treatment method, then the device is stable in the sub-ppm range and its electrical characteristics are greatly improved. © 2004 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)195 - 197
Number of pages3
JournalSensors and Actuators, B: Chemical
Volume102
Issue number2
DOIs
Publication statusPublished - 13 Sep 2004

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All Science Journal Classification (ASJC) codes

  • Analytical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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