Polycrystalline silicon films have been grown from Si2H6by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si2H6dissociation. © 2003 Elsevier B.V. All rights reserved.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Loreti, S., Santoni, A., Lancok, J., Menicucci, I., Minarini, C., & Della Sala, D. (2004). In situ excimer laser annealing of low-temperature low-pressure chemical vapour deposition grown polycrystalline silicon: Influence of metal diffusion on the film morphology and on the growth rate. Thin Solid Films, 458(1-2), 1 - 8. https://doi.org/10.1016/j.tsf.2003.10.038