Inclined substrate deposited CeO

A. Mancini, G. Celentano, F. Fabbri, V. Galluzzi, T. Petrisor, A. Rufoloni, E. Varesi, A. Vannozzi, R. Rogai, V. Boffa, U. Gambardella

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5 Citations (Scopus)


A study on CeO2 film growth on randomly oriented metallic substrate using Inclined Substrate Deposition (ISD) technique was performed in order to develop a biaxially aligned buffer layer for YBa2Cu3O7-δ (YBCO) coated conductors. The influence of deposition parameters, as the substrate inclination angle α with respect to the CeO2 vapor direction, deposition temperature and film thickness, on structural and morphological properties of the film was investigated. At substrate temperature between 200°C and 700°C a biaxial texture was observed for α ranging from 15° to 75°. The minimum value of the φ-scan full width at half maximum (FWHM) on (002) poles of about 13.5° was obtained for film 2 μm thick deposited at 200°C and α=55°. Morphological analyses on cross-sectioned samples revealed a columnar structure, typical for this deposition technique, with spaced gains and a tile like surface.
Original languageEnglish
Pages (from-to)886 - 892
Number of pages7
JournalInternational Journal of Modern Physics B
Issue number4-6 II
Publication statusPublished - 10 Mar 2003
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics

Cite this

Mancini, A., Celentano, G., Fabbri, F., Galluzzi, V., Petrisor, T., Rufoloni, A., ... Gambardella, U. (2003). Inclined substrate deposited CeO. International Journal of Modern Physics B, 17(4-6 II), 886 - 892.