In the frame of the European Project named FOTO, a new laboratory line for realizing thin film transistors (TFT) devices for microelectronic and photovoltaic applications, based on laser-recrystallized amorphous silicon, is going to be realized. In order to determine the optimum parameters during the silicon annealing process by the use of a long-pulse XeCl laser source, some experiments with a 8 J/p, 160 ns laser operating in the ENEA center of Frascati (Rome). The results were very encouraging and a new dedicated XeCl laser source has been designed for the new laboratory of Portici, according to the required working parameters.
|Publication status||Published - 2000|
|Event||High-Power Lasers in Manufacturing - , Unknown|
Duration: 1 Jan 2000 → …
|Conference||High-Power Lasers in Manufacturing|
|Period||1/1/00 → …|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Condensed Matter Physics
Letardi, T., Baldesi, A., Bollanti, S., Bonfigli, F., Di Lazzaro, P., Flora, F., ... Zheng, C. (2000). Industrial large aperture XeCl laser for surface processing. Paper presented at High-Power Lasers in Manufacturing, Unknown.