Industrial large aperture XeCl laser for surface processing

T. Letardi, A. Baldesi, S. Bollanti, F. Bonfigli, P. Di Lazzaro, F. Flora, G. Giordano, A. Marinai, D. Murra, G. Schina, C. Zheng

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

In the frame of the European Project named FOTO, a new laboratory line for realizing thin film transistors (TFT) devices for microelectronic and photovoltaic applications, based on laser-recrystallized amorphous silicon, is going to be realized. In order to determine the optimum parameters during the silicon annealing process by the use of a long-pulse XeCl laser source, some experiments with a 8 J/p, 160 ns laser operating in the ENEA center of Frascati (Rome). The results were very encouraging and a new dedicated XeCl laser source has been designed for the new laboratory of Portici, according to the required working parameters.
Original languageEnglish
Publication statusPublished - 2000
Externally publishedYes
EventHigh-Power Lasers in Manufacturing - , Unknown
Duration: 1 Jan 2000 → …

Conference

ConferenceHigh-Power Lasers in Manufacturing
CountryUnknown
Period1/1/00 → …

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Letardi, T., Baldesi, A., Bollanti, S., Bonfigli, F., Di Lazzaro, P., Flora, F., ... Zheng, C. (2000). Industrial large aperture XeCl laser for surface processing. Paper presented at High-Power Lasers in Manufacturing, Unknown.