Influence of growth parameters on properties of electroceramic thin films grown via MO-CVD

G. Padeletti, M. Viticoli, A. Cusmà, G.M. Ingo, A. Santoni, S. Loreti, C. Minarini, S. Viticoli

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Abstract

In the last years, zirconium titanate thin films ZrxTi1-xO4(ZT) turned out to have very interesting dielectric properties, which suggests a use in microwave integrated systems. In this work, the synthesis and characterization of ZrxTi1-xO4(ZT) thin films grown via MOCVD are described, giving emphasis to the study of their structural, chemical and physical properties, with relation to the different process parameters applied. All samples analysed by XRD, AFM, SEM and EDS, show a great dependence on substrate temperature and reactor pressure on the kinetic of growth as well as on the chemical, crystallographic, morphological and microstructural features. © 2002 Elsevier Science Ltd. All rights reserved.
Original languageEnglish
Pages (from-to)105 - 114
Number of pages10
JournalMaterials Science in Semiconductor Processing
Volume5
Issue number2-3
DOIs
Publication statusPublished - Apr 2002
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Padeletti, G., Viticoli, M., Cusmà, A., Ingo, G. M., Santoni, A., Loreti, S., ... Viticoli, S. (2002). Influence of growth parameters on properties of electroceramic thin films grown via MO-CVD. Materials Science in Semiconductor Processing, 5(2-3), 105 - 114. https://doi.org/10.1016/S1369-8001(02)00090-2