Thin CuInSe2 films were prepared by selenization of sputtered metal precursors. The surface morphology, phase composition and adhesion at the Mo/glass substrate of the ternary compound have been correlated to the structure of the precursor. Single phase, homogeneous, small grained (1 fim) CuInSe2 arises from precursors showing stable phases CunIn9 and In). An ordered vacancy compound (CuIn3Se5) is likely present in In-rich (In>27 at.%) films. Precursors with a high content of the metastable Culn2 phase show a very poor adhesion to the substrate. © 1993 The Japan Society of Applied Physics.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)