Influence of oxygen on the sputtering of aluminum oxide for the surface passivation of crystalline silicon

Tsu-Tsung Andrew Li, Simon Ruffell, Mario Tucci, Yves Mansouli, Christian Samundsett, Simona De Iullis, Luca Serenelli, Andres Cuevas

Research output: Contribution to journalArticle

25 Citations (Scopus)


While sputtering has been shown to be capable of depositing aluminum oxide suitable for surface passivation, the mechanisms for this are yet to be firmly established and its potential realized. In this paper, we investigate the relationships between the oxygen in the sputtering process to the resulting composition of the deposited film and the surface passivation obtained. We find that surface passivation is not strongly dependent on the bulk composition of the film. Instead the results indicate that the interfacial silicon oxide layer that forms after annealing between the aluminum oxide film and the silicon is a much more important factor; it is this combined structure of aluminum oxide, silicon oxide and silicon that is crucial for obtaining negative charges and excellent surface passivation. © 2010 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)69 - 72
Number of pages4
JournalSolar Energy Materials and Solar Cells
Issue number1
Publication statusPublished - 1 Jan 2011
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

Cite this