Influence of oxygen partial pressure and heat treatment on the properties of reactively sputtered in

M.K. Jayaraj, S. Loreti, A. Agati, A. Parretta

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Abstract

Indium oxide films were deposited on glass substrates at room temperature by reactive rf sputtering. The depositions were carried out by sputtering pure indium in an Ar + O2plasma. The influence of oxygen partial pressure during deposition on the optical, electrical, and structural properties of the films was investigated. The properties of the films were also studied after post-deposition heat treatments in air and in argon atmosphere. The study shows that conducting transparent films with resistivity 1.3 × 10-3Ω cm and transmission above 88% can be obtained by depositing the films at high oxygen partial pressures (> 0.21 Pa) and then annealing in argon atmosphere at 500 °C for one hour.
Original languageEnglish
Pages (from-to)115 - 123
Number of pages9
JournalPhysica Status Solidi (A) Applied Research
Volume155
Issue number1
DOIs
Publication statusPublished - 1996
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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