Indium oxide films were deposited on glass substrates at room temperature by reactive rf sputtering. The depositions were carried out by sputtering pure indium in an Ar + O2plasma. The influence of oxygen partial pressure during deposition on the optical, electrical, and structural properties of the films was investigated. The properties of the films were also studied after post-deposition heat treatments in air and in argon atmosphere. The study shows that conducting transparent films with resistivity 1.3 × 10-3Ω cm and transmission above 88% can be obtained by depositing the films at high oxygen partial pressures (> 0.21 Pa) and then annealing in argon atmosphere at 500 °C for one hour.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Jayaraj, M. K., Loreti, S., Agati, A., & Parretta, A. (1996). Influence of oxygen partial pressure and heat treatment on the properties of reactively sputtered in. Physica Status Solidi (A) Applied Research, 155(1), 115 - 123. https://doi.org/10.1002/pssa.2211550110