In the last few years, intensive research activity has been focused on the development of suitable synthesis methods for high-permittivity materials, used for the realization of next-generation microdevices able to fulfill the previsions of permittivity materials can overcome the difficulties concerning the production of SiO2-based ultra-thin dielectrics, such as the generation of pinholes and the non-uniformity of the film, which may result in a malfunction in high-density systems. Recently, zirconium titanate thin films were discovered to have very interesting dielectric properties, which suggests a use for them in microwave integrated systems, such as receivers or DRAMs, since they are monophasic, have little dissipation and show a good thermal stability and a high value for the dielectric constant, independent of frequency in the range from kilohertz to a few gigahertz. Real application is possible only in strict connection with the development of a suitable preparation method which allows production with controlled and reproducible characteristics. In this work, the synthesis and characterization of ZrxTi1-xO4 (ZT) thin films grown via MO-CVD is described, studying the influence of growth parameters on their structural, chemical and physical properties.
|Pages (from-to)||801 - 808|
|Number of pages||8|
|Journal||Applied Physics A: Materials Science and Processing|
|Publication status||Published - Mar 2003|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
Padeletti, G., Cusmá, A., Ingo, G. M., Santoni, A., Loreti, S., Minarini, C., & Viticoli, M. (2003). Influence of substrate temperature on the chemical and microstructural properties of MO-CVD ZrTiO. Applied Physics A: Materials Science and Processing, 76(5), 801 - 808. https://doi.org/10.1007/s00339-002-1663-6