Influence of substrate temperature on the chemical and microstructural properties of MO-CVD ZrTiO

G. Padeletti, A. Cusmá, G.M. Ingo, A. Santoni, S. Loreti, C. Minarini, M. Viticoli

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Abstract

In the last few years, intensive research activity has been focused on the development of suitable synthesis methods for high-permittivity materials, used for the realization of next-generation microdevices able to fulfill the previsions of permittivity materials can overcome the difficulties concerning the production of SiO2-based ultra-thin dielectrics, such as the generation of pinholes and the non-uniformity of the film, which may result in a malfunction in high-density systems. Recently, zirconium titanate thin films were discovered to have very interesting dielectric properties, which suggests a use for them in microwave integrated systems, such as receivers or DRAMs, since they are monophasic, have little dissipation and show a good thermal stability and a high value for the dielectric constant, independent of frequency in the range from kilohertz to a few gigahertz. Real application is possible only in strict connection with the development of a suitable preparation method which allows production with controlled and reproducible characteristics. In this work, the synthesis and characterization of ZrxTi1-xO4 (ZT) thin films grown via MO-CVD is described, studying the influence of growth parameters on their structural, chemical and physical properties.
Original languageEnglish
Pages (from-to)801 - 808
Number of pages8
JournalApplied Physics A: Materials Science and Processing
Volume76
Issue number5
DOIs
Publication statusPublished - Mar 2003
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

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