Silica thin films have been deposited by a dual-ion-beam sputtering technique using argon or xenon ions mixed with oxygen ions in the assisting beam and the role of the assisting-ion-beam parameters on the laser-damage-threshold at 308 nm (XeCl laser) has been investigated. It is shown that a proper choice of these parameters allows a considerable increase of the laser-induced damage threshold. Lower damage thresholds (1 J/cm2) were found for the xenon/oxygen assisted samples. Whereas, the highest damage threshold (8 J/cm2) was found for the argon-ion assisted sample and its value was also much higher than that (2.9 J/cm2) of the non-assisted films. Damage thresholds have been determined by the photoacoustic mirage technique and it is demonstrated that this technique can provide useful information on the mechanisms responsible for laser damage. © 1999 Elsevier Science S.A. All rights reserved.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Alvisi, M., De Nunzio, G., Perrone, M. R., Rizzo, A., Scaglione, S., & Vasanelli, L. (1999). Influence of the assisting-ion-beam parameters on the laser-damage threshold of SiO. Thin Solid Films, 338(1-2), 269 - 275. https://doi.org/10.1016/S0040-6090(98)00962-6