Influence of the assisting-ion-beam parameters on the laser-damage threshold of SiO

M. Alvisi, G. De Nunzio, M.R. Perrone, A. Rizzo, S. Scaglione, L. Vasanelli

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Abstract

Silica thin films have been deposited by a dual-ion-beam sputtering technique using argon or xenon ions mixed with oxygen ions in the assisting beam and the role of the assisting-ion-beam parameters on the laser-damage-threshold at 308 nm (XeCl laser) has been investigated. It is shown that a proper choice of these parameters allows a considerable increase of the laser-induced damage threshold. Lower damage thresholds (1 J/cm2) were found for the xenon/oxygen assisted samples. Whereas, the highest damage threshold (8 J/cm2) was found for the argon-ion assisted sample and its value was also much higher than that (2.9 J/cm2) of the non-assisted films. Damage thresholds have been determined by the photoacoustic mirage technique and it is demonstrated that this technique can provide useful information on the mechanisms responsible for laser damage. © 1999 Elsevier Science S.A. All rights reserved.
Original languageEnglish
Pages (from-to)269 - 275
Number of pages7
JournalThin Solid Films
Volume338
Issue number1-2
DOIs
Publication statusPublished - 11 Jan 1999

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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