Influence of the N

E. Piscopiello, M. Catalano, M. Vittori Antisari, A. Passaseo, E. Branca, R. Cingolani, M. Berti, A.V. Drigo

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Abstract

The influence of the N2/H2ratio in the growth environment on the defect structures of InGaN films was investigated by means of transmission electron microscopy and atomic force microscopy. InxGa1 - xN films (100 nm thick) were grown by MOCVD on GaN/Al2O3(0001) epilayers. In one case, the InGaN film was grown in pure H2carrier gas whereas, in the other, a N2+ H2mixture with a N2/H2ratio of 4 was used. The actual indium incorporation in the InxGa1 - xN epitaxial layers strongly depends on N2/H2ratio. The surfaces of both InGaN films exhibit a high density ( ∼ 109cm-2) of hexagonal shaped pits with a diameter of the order of a few tens of nanometres. The defect structures observed in the samples are the same and seem to be mainly dislocations and inversion domains, which terminate on the film surface with inverted hexagonal pyramids which are defined by six planes. © 2001 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)237 - 243
Number of pages7
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume87
Issue number3
DOIs
Publication statusPublished - 19 Dec 2001
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Piscopiello, E., Catalano, M., Vittori Antisari, M., Passaseo, A., Branca, E., Cingolani, R., ... Drigo, A. V. (2001). Influence of the N. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 87(3), 237 - 243. https://doi.org/10.1016/S0921-5107(01)00719-X