In this paper we present an innovative diode based on the heterojunction between amorphous silicon and porous silicon grown on crystalline silicon. The device architecture gives several advantages. Deposition of amorphous silicon on porous material realises high performance junction at temperature less than 250°C and it passives the porous layer against the natural oxidation due to ageing in the environment. Porous technology allows to obtain a controlled textured silicon surface independently from crystalline silicon orientation just to give the opportunity to reduce surface reflectivity and the blue shift of the absorption spectra in solar cell application. Solar cells were characterized by I-V dark/light and quantum yield measurements. Under standard AM 1.5 light we obtained photovoltaic conversion efficiency greater than 10%. Change in photoluminescence in different gas environments showed for gas sensor applications give rise encouraging results. In dark condition we found the typical diode behaviour.
|Pages (from-to)||863 - 868|
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|Publication status||Published - 1999|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
De Rosa, R., Ferrara, V. L. A., Difrancia, G., Quercia, L., Roca, F., & Tucci, M. (1999). Innovative diodes based on amorphous-porous silicon heterojunction. Materials Research Society Symposium - Proceedings, 557, 863 - 868.