In this work, we utilize an ultra-thin (below 5 nm) chromium silicide film as window layer on the top of an UV photodetector. The sensor is based on hydrogenated amorphous silicon (a-Si:H) and silicon carbide (a-SiC:H) n-i-p structure deposited on glass substrate with a grid-shaped top-electrode. The innovative layer is formed on the top of the amorphous films and acts as a shunt of the p-layer. The chromium silicide film leads to two advantages: first, it avoids the forward self-biasing polarization of the region between finger electrodes and second, it eliminates the effect of the boron activation in the p-doped layer under UV radiation. © 2006 Elsevier B.V. All rights reserved.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry
Caputo, D., de Cesare, G., Nascetti, A., & Tucci, M. (2006). Innovative window layer for amorphous silicon/amorphous silicon carbide UV sensor. Journal of Non-Crystalline Solids, 352(9-20 SPEC. ISS.), 1818 - 1821. https://doi.org/10.1016/j.jnoncrysol.2005.09.052