Innovative window layer for amorphous silicon/amorphous silicon carbide UV sensor

D. Caputo, G. de Cesare, A. Nascetti, M. Tucci

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this work, we utilize an ultra-thin (below 5 nm) chromium silicide film as window layer on the top of an UV photodetector. The sensor is based on hydrogenated amorphous silicon (a-Si:H) and silicon carbide (a-SiC:H) n-i-p structure deposited on glass substrate with a grid-shaped top-electrode. The innovative layer is formed on the top of the amorphous films and acts as a shunt of the p-layer. The chromium silicide film leads to two advantages: first, it avoids the forward self-biasing polarization of the region between finger electrodes and second, it eliminates the effect of the boron activation in the p-doped layer under UV radiation. © 2006 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)1818 - 1821
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume352
Issue number9-20 SPEC. ISS.
DOIs
Publication statusPublished - 15 Jun 2006
Externally publishedYes

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Cite this