We report on the characterization and modeling of amorphous silicon films deposited from a mixture of silane and diluted phosphine and diborane gases at doping concentrations varying over four orders of magnitude. At the smallest doping concentrations, the single doping species do not interact and compensation is achieved for diborane/phosphine ratio equal to the inverse of their doping efficiency. At larger concentrations, compensation is obtained by using the same amount of diborane and phosphine in the gas mixture with silane. This equality indicates an interaction between the two doping species which leads to formation of boron-phosphorous cluster and a decrease of defects. An increase of photoconductivity with increasing defect density has been found. We model this behavior by assuming the presence in the gap of the material of two Gaussian distributions of shallow states with different capture cross-sections for the two carriers and we discuss a possible origin of these defects. © 1998 Elsevier Science B.V. All rights reserved.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry
Caputo, D., De Cesare, G., Palma, F., Tucci, M., Minarini, C., & Terzini, E. (1998). Interaction of phosphorus and boron in compensated amorphous silicon films. Journal of Non-Crystalline Solids, 227-230(PART 1), 380 - 384. https://doi.org/10.1016/S0022-3093(98)00079-9