Intrinsic defects and metastability effects in Cu

A. Mittiga, F. Biccari, C. Malerba

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28 Citations (Scopus)


Cu2O based junctions (both Schottky and ZnO/Cu2O heterojunctions) exhibit a metastable capacitance increase after illumination or reverse bias application. We show that this effect is related to the persistent photoconductivity in Cu2O substrates. To obtain a quantitative evaluation of defect properties we have measured conductivity vs T, Capacitance-Voltage, persistent photoconductivity decay and capacitance transient at different temperatures. We show that it is impossible to explain these data using an electronic mechanism only. A new model which includes the formation-dissociation of intrinsic defect complexes (VCu-VO) can give instead a better agreement with the experimental data. © 2008 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)2469 - 2472
Number of pages4
JournalThin Solid Films
Issue number7
Publication statusPublished - 2 Feb 2009


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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