In this paper we present an extensive study of amorphous silicon compensated materials, grown from a mixture of undiluted silane, hydrogen diluted phosphine and hydrogen diluted diborane. Two different compensation regimes were found. At low gas dopant concentration each dopant acts as a single dopant and compensation is achieved for the phosphine/diborane ratio equal to the inverse of their doping efficiency. At high gas dopant concentration, interaction of the two dopant species tends to equalize their doping efficiencies. A dark conductivity around 10-11Ω-1cm-1, photosensitivity ratio under AM 1.5 of 6 orders of magnitude and defect density ranging from 8.5 X 1015to 1.5 X 1017cm-3were obtained. A decrease of photoconductivity with decreasing defect density has surprisingly been found in the as-grown samples, whereas during light-soaking samples with the lowest defect density degrade the fastest. These results suggest that the nature and kinetics of defects in compensated films are different from those of intrinsic materials. © 1997 Elsevier Science S.A.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Caputo, D., De Cesare, G., Palma, F., Tucci, M., Minarini, C., & Terzini, E. (1997). Investigation of amorphous silicon compensated materials over a wide range of dopant concentrations. Thin Solid Films, 303(1-2), 269 - 272. https://doi.org/10.1016/S0040-6090(97)00067-9