Investigation of the damage as induced by 1.7 MeV protons in an amorphous/crystalline silicon heterojunction solar cell

Heinz-Christoph Neitzert, Patrizio Spinillo, Salvatore Bellone, Gian-Domenico Licciardi, Mario Tucci, Francesco Roca, Lucio Gialanella, Mario Romano

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18 Citations (Scopus)

Abstract

Current-voltage under illumination and quantum yield characteristics of an amorphous silicon/crystalline silicon hetero solar cell have been measured before and after exposure to high-energy (1.7MeV) protons. A comparison of the measured wavelength-dependent quantum yield with calculated values enabled to determine the effective electron diffusion length of the crystalline silicon, that dropped from a value of 434μm before to a value of 4μm after irradiation with 5×1012cm-2protons. Good agreement has been obtained between measured and simulated data using DIFFIN,1Developed by the Electrical Engineering Department at the University of Rome "La Sapienza". a finite-element simulation program for a-Si:H/c-Si heterojunction solar cells, enabling us to extract the depth profile of the recombination rate and the density of states distribution in the semiconductor layers before and after irradiation. © 2004 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)435 - 446
Number of pages12
JournalSolar Energy Materials and Solar Cells
Volume83
Issue number4
DOIs
Publication statusPublished - Jul 2004

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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