Current-voltage under illumination and quantum yield characteristics of an amorphous silicon/crystalline silicon hetero solar cell have been measured before and after exposure to high-energy (1.7MeV) protons. A comparison of the measured wavelength-dependent quantum yield with calculated values enabled to determine the effective electron diffusion length of the crystalline silicon, that dropped from a value of 434μm before to a value of 4μm after irradiation with 5×1012cm-2protons. Good agreement has been obtained between measured and simulated data using DIFFIN,1Developed by the Electrical Engineering Department at the University of Rome "La Sapienza". a finite-element simulation program for a-Si:H/c-Si heterojunction solar cells, enabling us to extract the depth profile of the recombination rate and the density of states distribution in the semiconductor layers before and after irradiation. © 2004 Elsevier B.V. All rights reserved.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
Neitzert, H-C., Spinillo, P., Bellone, S., Licciardi, G-D., Tucci, M., Roca, F., ... Romano, M. (2004). Investigation of the damage as induced by 1.7 MeV protons in an amorphous/crystalline silicon heterojunction solar cell. Solar Energy Materials and Solar Cells, 83(4), 435 - 446. https://doi.org/10.1016/j.solmat.2004.01.035