Issues of low activation brazing of SiC

B. Riccardi, C.A. Nannetti, T. Petrisor, J. Woltersdorf, E. Pippel, S. Libera, L. Pilloni

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The paper presents a novel low activation brazing technique for SiCf/SiC composites. The brazing alloy does not contain free silicon and is based on the use of a Si-44Cr at.% eutectic and the intermetallic CrSi2(melting temperatures 1390 and 1490°C, respectively). These are advantageous because the melting point is low enough to avoid degradation of the advanced fibres and of the interphases in the composite, and the Si-Cr intermetallics are chemically compatible with silicon carbide. Both the eutectic and the intermetallic were prepared before brazing operations by melting a Si-Cr mixture. The joining was performed under vacuum (about 10-4Pa). Systematic investigations of the microstructure and of the nanochemistry (TEM, EELS, ELNES) of the Si-Cr joints reveal that direct chemical Si-Si, Cr-C and Si-Cr bonds across the interface are responsible for the adhesion: the interfaces were proved to be nearly atomically sharp and adhesive. Altogether, this brazing procedure enables joints with sufficient strength and with a microstructure comparable with that of the starting powders to be obtained. © 2004 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)562 - 566
Number of pages5
JournalJournal of Nuclear Materials
Issue number1-3 PART A
Publication statusPublished - 1 Aug 2004
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Nuclear Energy and Engineering

Cite this

Riccardi, B., Nannetti, C. A., Petrisor, T., Woltersdorf, J., Pippel, E., Libera, S., & Pilloni, L. (2004). Issues of low activation brazing of SiC. Journal of Nuclear Materials, 329-333(1-3 PART A), 562 - 566.