Indium tin oxide thin films have been deposited on glass substrates using RF magnetron sputtering at different RF power densities (0.27-0.80 W/cm2) and at different substrate temperatures (RT-250 °C). Film structure, crystallite size and orientation, optical absorption coefficient and bandgap have been determined. Hall effect measurement was used to measure the carrier concentration and mobility values. An optimized deposition area of 11×3 cm2has been further extended to 10×10 cm2by substrate movement. Increase in resistivity from 2.2·10-4Ω·cm to 6.8·10-4Ω·cm was observed as an effect of substrate sweeping and it was adjusted again to 2.4·10-4Ω·cm by increasing deposition rate.
|Pages (from-to)||255 - 259|
|Number of pages||5|
|Journal||Diffusion and Defect Data Pt.B: Solid State Phenomena|
|Publication status||Published - 1999|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Condensed Matter Physics
- Physics and Astronomy (miscellaneous)
Thilakan, P., Terzini, E., Nobile, G., Loreti, S., Minarini, C., Polichetti, T., & Sasikala, G. (1999). Large area device quality indium-tin-oxide thin films by magnetron sputtering. Diffusion and Defect Data Pt.B: Solid State Phenomena, 67, 255 - 259.