Hydrogenated amorphous silicon-carbon films with carbon content, x=C/(C+Si), ranging from 0.08 to 0.28 have been irradiated by excimer (KrF) laser varying the incident energy density, Φ, from 64 to 242 mJ/cm2. The crystallization of the silicon phase is induced in all the samples, independently of the alloy composition and the average Si crystallite size increases with the laser energy density. Cubic SiC crystallites, sized 200-450 Å, are only detectable in samples with x≥0.18 irradiated at Φ≥188 mJ/cm2. The structural and electrical properties of the laser treated films have been investigated. After crystallization all films show a noticeable increase in dark conductivity. © 2003 Elsevier B.V. All rights reserved.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Coscia, U., Ambrosone, G., Minarini, C., Parisi, V., Schutzmann, S., Tebano, A., ... Rigato, V. (2004). Laser annealing of hydrogenated amorphous silicon-carbon films. Thin Solid Films, 453-454, 7 - 12. https://doi.org/10.1016/j.tsf.2003.11.070