Bolometers based on micromachined poly-SiGe as active elements have recently been demonstrated. The advantage of using poly-SiGe relies on its low thermal conductivity, high coefficient of temperature resistance and perfect compatibility with the IC silicon technology. In order to simplify a device integration of such elements, a combination of laser-assisted low thermal budget techniques such as laser-induced chemical vapour deposition and laser-assisted crystallisation has been proposed. The present paper shows the first results obtained using this "all laser-assisted" process for producing amorphous as well as polycrystalline SiGe alloys and the simulation of the crystallisation processes via numerical analysis for tuning the parameters of the crystallisation process. © 2002 Elsevier Science B.V. All rights reserved.
All Science Journal Classification (ASJC) codes
- Surfaces, Coatings and Films
Chiussi, S., Serra, C., Serra, J., González, P., León, B., Urban, S., Andrä, G., Bergmann, J., Falk, F., Fabbri, F., Fornarini, L., Martelli, S., & Rinaldi, F. (2002). Laser crystallisation of poly-SiGe for microbolometers. Applied Surface Science, 186(1-4), 166 - 172. https://doi.org/10.1016/S0169-4332(01)00614-6