Laser treatment of amorphous silicon junction field effect transistor channel

D. Caputo, G. De Cesare, P. Delli Veneri, M. Tucci

Research output: Contribution to journalArticle


A systematic study of laser treatment of the channel of an amorphous silicon junction field effect transistor (JFET) is presented, using a Nd:YLF laser at 523 nm and power ranging from 20 to 635 mJ/cm2. A threshold energy equal to 150 mJ/cm2is observed. Above this value higher power gives higher channel conductivity and reverse current of the gate-drain and gate-source junctions. Furthermore, the increase of conductivity corresponds to a lack of channel modulability due to an increase of defects and/or active dopant, which hampers the depletion of the channel. © 2002 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)1326 - 1329
Number of pages4
JournalJournal of Non-Crystalline Solids
Issue numberPART 2
Publication statusPublished - Apr 2002
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Cite this