A systematic study of laser treatment of the channel of an amorphous silicon junction field effect transistor (JFET) is presented, using a Nd:YLF laser at 523 nm and power ranging from 20 to 635 mJ/cm2. A threshold energy equal to 150 mJ/cm2is observed. Above this value higher power gives higher channel conductivity and reverse current of the gate-drain and gate-source junctions. Furthermore, the increase of conductivity corresponds to a lack of channel modulability due to an increase of defects and/or active dopant, which hampers the depletion of the channel. © 2002 Elsevier Science B.V. All rights reserved.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry
Caputo, D., De Cesare, G., Delli Veneri, P., & Tucci, M. (2002). Laser treatment of amorphous silicon junction field effect transistor channel. Journal of Non-Crystalline Solids, 299-302(PART 2), 1326 - 1329. https://doi.org/10.1016/S0022-3093(01)01096-1