Light-emitting porous silicon from cast metallurgical-grade silicon

Pietro Menna, Y.S. Tsuo, M.M. Al-Jassim, S.E. Asher, F.J. Pern, T.F. Ciszek

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Strong visible light emissions from porous silicon (PS) prepared from cast metallurgical-grade silicon (MG-Si) are reported for the first time. The Si substrates used for the preparation of the PS films were obtained by directional solidification casting of MG-Si, followed by wafer sawing and lapping. A chemical etching method was used instead of the conventional electrochemical method of producing PS. The photoluminescence spectra are characterized by a full width at half maximum of 340 to 370 meV, a 2.0 eV peak energy, and a strong peak intensity.
Original languageEnglish
Pages (from-to)-
JournalJournal of the Electrochemical Society
Volume143
Issue number6
DOIs
Publication statusPublished - 1996
Externally publishedYes

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Menna, P., Tsuo, Y. S., Al-Jassim, M. M., Asher, S. E., Pern, F. J., & Ciszek, T. F. (1996). Light-emitting porous silicon from cast metallurgical-grade silicon. Journal of the Electrochemical Society, 143(6), -. https://doi.org/10.1149/1.1836894