Strong visible light emissions from porous silicon (PS) prepared from cast metallurgical-grade silicon (MG-Si) are reported for the first time. The Si substrates used for the preparation of the PS films were obtained by directional solidification casting of MG-Si, followed by wafer sawing and lapping. A chemical etching method was used instead of the conventional electrochemical method of producing PS. The photoluminescence spectra are characterized by a full width at half maximum of 340 to 370 meV, a 2.0 eV peak energy, and a strong peak intensity.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry
Menna, P., Tsuo, Y. S., Al-Jassim, M. M., Asher, S. E., Pern, F. J., & Ciszek, T. F. (1996). Light-emitting porous silicon from cast metallurgical-grade silicon. Journal of the Electrochemical Society, 143(6), -. https://doi.org/10.1149/1.1836894