Low-temperature laser-CVD thin film growth of SiC from Si

A. Santoni, J. Lancok, S. Loreti, I. Menicucci, C. Minarini, F. Fabbri, D. Della Sala

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SiC thin films have been synthesised by combining low pressure chemical vapour deposition from Si2H6and C2H2at 520°C and in situ KrF-excimer laser annealing. Glancing incidence X-ray analysis showed the quantity of polycrystalline SiC in the laser-irradiated area depends on the mass-flow ratio of the precursor gases. In the region outside the laser spot where the films are amorphous, X-ray photoelectron spectroscopy measurements showed an increased SiC character for low disilane:acetylene mass-flow ratios. © 2003 Published by Elsevier B.V.
Original languageEnglish
Pages (from-to)272 - 276
Number of pages5
JournalJournal of Crystal Growth
Issue number3-4
Publication statusPublished - Nov 2003
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Santoni, A., Lancok, J., Loreti, S., Menicucci, I., Minarini, C., Fabbri, F., & Della Sala, D. (2003). Low-temperature laser-CVD thin film growth of SiC from Si. Journal of Crystal Growth, 258(3-4), 272 - 276. https://doi.org/10.1016/S0022-0248(03)01554-9