Mask tilt effects counteracted by wafer tilts in a Schwarzschild objective based EUV lithography setup

S. Bollanti, P. Di Lazzaro, F. Flora, L. Mezi, D. Murra, ATorre

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

The results of a numerical simulation of a conventional and a modified Schwarzschild objective are illustrated in relation with their use as imaging systems in an extreme ultraviolet lithography setup. It is demonstrated that the degradation of the resolution on the wafer due to the unavoidable tilt of the mask to the axis can fairly be vanished by a counter tilt of the wafer. In particular, it has been analysed the Schwarzschild objective setup under implementation at the ENEA Frascati Center within the context of the Italian FIRB project for EUV lithography.
Original languageEnglish
DOIs
Publication statusPublished - 2005
Externally publishedYes
EventOptical Design and Engineering II - , Germany
Duration: 1 Jan 2005 → …

Conference

ConferenceOptical Design and Engineering II
CountryGermany
Period1/1/05 → …

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Bollanti, S., Lazzaro, P. D., Flora, F., Mezi, L., Murra, D., & ATorre (2005). Mask tilt effects counteracted by wafer tilts in a Schwarzschild objective based EUV lithography setup. Paper presented at Optical Design and Engineering II, Germany. https://doi.org/10.1117/12.624845