Measurement of Ge electrical parameters by analysing its optical dynamics

S. Marchetti, M. Martinelli, R. Simili, M. Giorgi, R. Fantoni

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

By using a dynamical model giving both the IR reflectivity and transmittivity of a semiconductor after an intense photo-plasma production, it is possible to derive several electrical parameters, as Auger recombination, radiative recombination and impurity recombination. The model has been tested on previous experimental works and used to analyse the 10.6 μm dynamical transmission reflection induced by a 1.06 ns excitation in Ge optical windows.
Original languageEnglish
Pages (from-to)509 - 511
Number of pages3
JournalPhysica Scripta
Volume64
Issue number5
DOIs
Publication statusPublished - Nov 2001
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Mathematical Physics
  • Condensed Matter Physics

Cite this

Marchetti, S., Martinelli, M., Simili, R., Giorgi, M., & Fantoni, R. (2001). Measurement of Ge electrical parameters by analysing its optical dynamics. Physica Scripta, 64(5), 509 - 511. https://doi.org/10.1238/Physica.Regular.064a00509