Polycrystalline silicon films were grown from Si2H6, by Low-Pressure Chemical Vapor Deposition (LPCVD) at 800K and in-situ laser annealing of amorphous silicon seed layers deposited on different metallic films. According to the Metal Induced Crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. The influence of different metals on the obtained morphologies and crystalline phases were investigated by X-ray diffraction and Scanning Electron Microscopy. The experimental results show that the film morphology depends strongly on the metal used to promote the silicon crystallization.
|Publication status||Published - 2004|
|Event||Progress in Advanced Materials and Processes: Proceedings of the Fifth Jugoslav Materials Research Society, YUCOMAT V - , Unknown|
Duration: 1 Jan 2004 → …
|Conference||Progress in Advanced Materials and Processes: Proceedings of the Fifth Jugoslav Materials Research Society, YUCOMAT V|
|Period||1/1/04 → …|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
Loreti, S., Santoni, A., Fryček, R., Menicucci, I., Minarini, C., & Della Sala, D. (2004). Metal-induced crystallization of polycrystalline silicon by in-situ excimer laser annealing during low-pressure CVD growth. Paper presented at Progress in Advanced Materials and Processes: Proceedings of the Fifth Jugoslav Materials Research Society, YUCOMAT V, Unknown.