Metal-induced crystallization of polycrystalline silicon by in-situ excimer laser annealing during low-pressure CVD growth

S. Loreti, A. Santoni, R. Fryček, I. Menicucci, C. Minarini, D. Della Sala

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

Polycrystalline silicon films were grown from Si2H6, by Low-Pressure Chemical Vapor Deposition (LPCVD) at 800K and in-situ laser annealing of amorphous silicon seed layers deposited on different metallic films. According to the Metal Induced Crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. The influence of different metals on the obtained morphologies and crystalline phases were investigated by X-ray diffraction and Scanning Electron Microscopy. The experimental results show that the film morphology depends strongly on the metal used to promote the silicon crystallization.
Original languageEnglish
Publication statusPublished - 2004
Externally publishedYes
EventProgress in Advanced Materials and Processes: Proceedings of the Fifth Jugoslav Materials Research Society, YUCOMAT V - , Unknown
Duration: 1 Jan 2004 → …

Conference

ConferenceProgress in Advanced Materials and Processes: Proceedings of the Fifth Jugoslav Materials Research Society, YUCOMAT V
CountryUnknown
Period1/1/04 → …

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Loreti, S., Santoni, A., Fryček, R., Menicucci, I., Minarini, C., & Della Sala, D. (2004). Metal-induced crystallization of polycrystalline silicon by in-situ excimer laser annealing during low-pressure CVD growth. Paper presented at Progress in Advanced Materials and Processes: Proceedings of the Fifth Jugoslav Materials Research Society, YUCOMAT V, Unknown.