Metal-metal epitaxy on silicon: Cu/Ni/Cu ultrathin filmson 7 × 7-Si(111)

G. Gubbiotti, G. Carlotti, C. Minarini, S. Loreti, R. Gunnella, M. De Crescenzi

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Cu/Ni/Cu heterostructures have been in situ deposited on the 7x7 reconstructed Si(lll) surface. A number of complementary techniques, such as in situ low-energy, medium-energy and Kikuchi electron diffraction and ex situ X-ray diffraction, were used in order to characterise the growth process and the structural properties of the films. It is found that the growth mode of metallic films is characterised by the presence of twinned islands induced by the 7 ×7 reconstruction of the Si(111) substrate. This work can stimulate further application of the metal-metal epitaxy on silicon to grow high quality ultrathin magnetic films to be integrated in microelectronic devices. © 2000 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)218 - 226
Number of pages9
JournalSurface Science
Volume449
Issue number1-3
DOIs
Publication statusPublished - 20 Mar 2000
Externally publishedYes

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Gubbiotti, G., Carlotti, G., Minarini, C., Loreti, S., Gunnella, R., & De Crescenzi, M. (2000). Metal-metal epitaxy on silicon: Cu/Ni/Cu ultrathin filmson 7 × 7-Si(111). Surface Science, 449(1-3), 218 - 226. https://doi.org/10.1016/S0039-6028(00)00054-6