Hydrogenated microcrystalline silicon films have been deposited by RF-PECVD varying the RF power from 20 to 200 W, using a silane concentration of 3% and a total flow rate of 206 sccm. The film properties do not change appreciably in a wide range of RF power: dark conductivity, hydrogen content and grain dimension are approximately constant, 10- 4S/cm, 2 at.%, 10 nm, respectively. A deposition rate of 0.5 nm/s has been reached at the RF power of 150 W. Films deposited at high deposition rate show, in the near infrared region, a clear enhancement of optical absorption due to the light scattering and low defect absorption. © 2005 Elsevier B.V. All rights reserved.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Ambrosone, G., Coscia, U., Lettieri, S., Maddalena, P., Ambrico, M., Perna, G., & Minarini, C. (2006). Microcrystalline silicon thin films grown at high deposition rate by PECVD. Thin Solid Films, 511-512, 280 - 284. https://doi.org/10.1016/j.tsf.2005.12.110